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Recent faculty/student research projects in Materials Science
(student names in italics)
Kettering University's Raman spectrometer was recently used by David Warner (Electrical Engineering '99) and Dr. Bahram Roughani (Applied Physics Faculty) to collect the Raman spectra from a Si wafer. The polarization dependence Raman spectra of Si were collected as a function of the angle between the laser polarization direction and the crystal orientation of the Si sample. Micro Raman spectra were collected using Kettering University's micro-Raman facility, which provides the highest possible theoretical spatial resolution of 1 µm. The Si sample was cleaved along the (110) crystal orientation. The Raman spectra shown below is a 3-D plot for a sequence of spectra collected by rotating the sample in 7.5 degree increments. The variation of the polarization dependence Raman peak intensity displays the high sensitivity of the Raman technique in determining the lattice structure and symmetry of crystalline structures, such as Si.
